dm n10h170sfde d atasheet number: d s 35901 rev. 4 - 2 1 of 6 www.diodes.com february 2015 ? diodes incorporated dmn10h170sfde advance information advanced information 100v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25c 100 v 1 6 0m ? @ v gs = 10 v 2.9a 20 0 m? @ v gs = 4 .5v 2.6a description this new generation mosfet is designed to minimize the on - state resistan ce (r ds(on) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? power m anagement f unctions ? battery operated systems and solid - state relays ? drivers: relays, solenoids, lamps, ha mmers, displays, memories, transistors, etc . features and benefits ? 0. 6 mm p rofile C i deal for l ow p rofile a pplications ? pcb f ootprint of 4mm 2 ? low on - resistance ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green devi mechanical data ? case: u - dfn 2020 - 6 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C nipdau over copper l eadframe. solde rable per mil - std - 202, method 208 ? weight: 0.0065 grams ( a pproximate) ordering information (note 4 ) part number compliance case quantity per reel dm n10h170sfde - 7 standard u - dfn2020 - 6 3,000 dm n10h170sfde - 13 standard u - dfn2020 - 6 10 ,000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorpor ateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compo unds 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information u - dfn 2020 - 6 date code key year 2014 2015 2016 2017 201 8 201 9 20 20 20 20 code b c d e f g h i month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u - dfn 2020 - 6 bottom view pin out equivalent circuit 7h = product type marki ng code ym = date code marking y = year (ex: b = 201 4 ) m = month (ex: 9 = september) 7h y m d s g e4
dm n10h170sfde d atasheet number: d s 35901 rev. 4 - 2 2 of 6 www.diodes.com february 2015 ? diodes incorporated dmn10h170sfde advance information advanced information maximum ratings ( @t a = + 25c unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 10 0 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10 v steady state t a = + 25c t a = + 70c i d 2.9 2.3 a t<10s t a = + 25c t a = + 70c i d 3.4 2.7 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm 1 0 a maximum body diode c ontinuous current i s 2.5 a avalanche current (note 7 ) i as 4.7 a avalanche energy (note 7 ) e as 16 mj thermal characteristics ( @t a = + 25c unless otherwise specified .) characteristic symbol value units total power dissipation (note 5 ) t a = + 25c p d 0.66 w t a = + 70 c 0.42 thermal resistance, junction to ambient (note 5 ) s teady state r ? ja 189 c/w t<10s 132 total power dissipation (note 6 ) t a = + 25c p d 2.03 w t a = + 70 c 1.31 thermal resistance, junction to ambient (note 6 ) s teady state r ? ja 61 c/w t<10s 43 thermal resistance, junction to case (note 6 ) r ? j c 9.3 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @t a = + 25c unless otherwise specified .) characteristic symbol min typ max un it test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 100 - - v v gs = 0v, i d = 250 a j = + 25c i dss - - 1 a v ds = 100 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 2 0 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1 .0 2.0 3 .0 v v ds = v gs , i d = 250 a ds(on) - 116 16 0 m ? gs = 10 v, i d = 5 .0 a 126 20 0 v gs = 4.5 v, i d = 5 .0 a diode forward voltage v sd - 0. 9 1.0 v v gs = 0v, i s = 10 a dynamic characteristic s (note 9 ) input capacitance c iss - 1167 - pf v ds = 25 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 36 - pf reverse transfer capacitance c rss - 25 - pf gate resistance r g - 1.3 - ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g - 4.9 - nc v ds = 8 0 v, i d = 12.8 a total gate charge ( v gs = 1 0v ) q g - 9.7 - nc gate - source charge q gs - 2.0 - nc gate - drain charge q gd - 2.0 - nc turn - on delay time t d(on) - 10.5 - ns v ds = 5 0 v, i d = 12. 8 a v g s = 10 v, r g = 25 r - 11.1 - ns turn - off delay time t d(off) - 42.6 - ns turn - off fall time t f - 12.8 - ns reverse recovery time t rr - 30.3 - ns i f = 12.8 a, di/dt = 10 0a/s rr - 35.2 - n c notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout . 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate . 7 .uis in pr oduction with l = 1.43 mh, tj = + 25c . 8 . short duration pulse test used to mi nimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm n10h170sfde d atasheet number: d s 35901 rev. 4 - 2 3 of 6 www.diodes.com february 2015 ? diodes incorporated dmn10h170sfde advance information advanced information 0 0.5 1.0 1.5 2.0 v , drain-source voltage (v) fig.1 typical output characteristic ds 0 2 4 6 8 10 i , d r a i n c u r r e n t ( a ) d 0 2 4 6 8 10 1 2 3 4 5 v , gate-source voltage gs fig. 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 1 2 3 4 5 6 7 8 9 10 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain-source current d fig. 3 typical on-resistance vs. drain current and gate voltage v = 2.5v gs v = 4.5v gs v = 1.8v gs 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 2 4 6 8 10 i , drain current d fig. 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 50 - 25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 5 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = 5v i = 5a gs d v = v i = 10a gs d 10 0 0.05 0.10 0.15 0.20 0.25 0.30 v = v i = 10a gs d 10 v = v i = 5a gs d 5 - 50 - 25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ?
dm n10h170sfde d atasheet number: d s 35901 rev. 4 - 2 4 of 6 www.diodes.com february 2015 ? diodes incorporated dmn10h170sfde advance information advanced information 0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) fig. 7 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250a d 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( v ) s t = 25c a 0 10 20 30 40 c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds fig. 9 typical junction capacitance c iss c oss c rss f = 1mhz 0 2 4 6 8 10 q (nc) g , total gate charge fig. 10 gate charge 0 2 4 6 8 10 v g a t e t h r e s h o l d v o l t a g e ( v ) g s v = 80v i = a ds d 12.8 v , drain-source voltage (v) ds figure 11 soa, safe operation area i , d r a i n c u r r e n t ( a ) d 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 dc p = 10s w p = 1s w p = 100ms w p = 100s w p = 1ms w p = 10ms w r ds(on) limited t = 150c j (m ax ) t = 25c a v = 10v gs single pulse dut on 1 * mrp board
dm n10h170sfde d atasheet number: d s 35901 rev. 4 - 2 5 of 6 www.diodes.com february 2015 ? diodes incorporated dmn10h170sfde advance information advanced information package outline dimensions please see ap02002 at http://www.diode s.com/datasheets/ap0200 2 .pdf for the latest version. u - dfn2020 - 6 type e dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 e 1.95 2.05 2.00 e2 1.40 1.60 1.50 e l 0.25 0.35 0.30 l1 0.82 0.92 0.87 k1 k2 z all dimensions in mm 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 11 transient thermal resistance 0.001 0.01 0.1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 1 r (t) = r(t) * r ? ja r = 61c/w duty cycle, d = t1/ t2 ? ? ja ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse a1 z(4x) b1 l1 k1 k2 d d2 e e b(6x) l(2x) e2 a a3
dm n10h170sfde d atasheet number: d s 35901 rev. 4 - 2 6 of 6 www.diodes.com february 2015 ? diodes incorporated dmn10h170sfde advance information advanced information suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, in cluding, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enh ancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product describe d herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such use and wi ll agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pu rchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all cl aims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, in ternational or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for r eference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices o r systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any compo nent in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its rep resentatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com dimensions value (in mm) c 0.650 x 0.400 x1 0.285 x2 1.050 y 0.500 y1 0.920 y2 1.600 y3 2.300 x1 y3 x (6x) c x2 y1 y2 y (2x)
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